US20260068758
2026-03-05
Electricity
H01L25/0657
The patent application describes a high bandwidth memory (HBM) system featuring a novel structure that enhances data transmission speed and storage capacity. The design incorporates a first semiconductor stack of multiple dies, a glass core, and a second semiconductor stack, all aligned vertically. This configuration aims to address challenges in miniaturization and performance in semiconductor packaging.
In response to the growing demand for compact and lightweight electronic devices, the semiconductor industry is pursuing technologies that offer higher speed and greater functionality. Traditional memory stacks face issues such as voids and heat accumulation when increasing the number of dies, leading to performance degradation. The proposed HBM design seeks to mitigate these issues by introducing a glass core between stacks.
The innovative aspect of the HBM lies in the use of a glass core that facilitates hybrid bonding between memory stacks. Each stack consists of multiple memory dies, encapsulated in a molding material. This structure not only prevents void formation but also reduces warpage and enhances heat dissipation, thereby maintaining high performance even at increased stack heights.
The proposed HBM can be manufactured through a simplified process that leverages verified memory stack structures and glass cores. This approach improves productivity by allowing separate manufacturing of components before integration. Additionally, the inclusion of dummy through-silicon vias in the base die and memory dies enhances heat dissipation, further supporting the memory's performance.
By integrating glass cores and dummy vias, the HBM system achieves improved thermal management and structural integrity. These enhancements allow for more reliable and efficient memory operation in high-performance applications. The design supports higher bandwidth and reduced power consumption, making it suitable for advanced computing needs.