Invention Title:

VACUUM LEAKAGE DETECTION DEVICE AND SEMICONDUCTOR MANUFACTURING SYSTEM COMPRISING THE SAME

Publication number:

US20260110589

Publication date:
Section:

Physics

Class:

G01M3/20

Inventors:

Assignees:

Applicant:

Smart overview of the Invention

A vacuum leakage detection device is designed to identify leaks in semiconductor manufacturing systems. It integrates several components including a first pipe for introducing a target chemical species from the semiconductor device, an additional gas supplier, a flow meter, a plasma generator, a sensor, and a processor. The additional gas reacts with the target chemical to form a monitoring chemical species, which is then converted to a plasma state. The sensor captures emission spectrum data from this plasma, allowing the processor to calculate the leakage amount based on emission intensity.

Significance

In semiconductor manufacturing, maintaining a controlled environment is crucial to prevent wafer contamination. Leaks in the process chamber can introduce external gases, leading to defects in the wafers. This detection device is essential for ensuring the integrity of the manufacturing process by promptly identifying and quantifying leaks, thereby minimizing potential defects and improving overall production quality.

Components and Functionality

The device comprises a first pipe connected to the semiconductor device to introduce the target chemical species. An additional gas supplier injects a chemical species through a second pipe to react with the target species. A flow meter regulates the flow rate of this additional gas. The resultant monitoring chemical species is transformed into a plasma state by the plasma generator. The sensor then collects emission spectrum data, which the processor uses to determine the leakage amount based on the intensity of the emissions.

Integration with Manufacturing Systems

The vacuum leakage detection device is integrated into semiconductor manufacturing systems, enhancing their ability to monitor and maintain vacuum integrity. This integration allows for real-time detection and response to leaks, facilitating continuous operation without significant downtime. The system can adjust processes dynamically based on the leakage data, optimizing manufacturing efficiency and product quality.

Operation Method

The operation involves introducing the target chemical species to the plasma generator via the first pipe. The additional chemical species is supplied at a controlled flow rate through the second pipe. The reaction between the chemicals generates a monitoring species, which is excited into a plasma state. Emission spectrum data from this plasma is collected and analyzed to calculate the leakage amount, ensuring accurate and timely detection of vacuum leaks.