US20260136582
2026-05-14
Electricity
H10D30/485
The patent application outlines a vertical structure semiconductor device featuring a unique configuration involving a first electrode layer with a transition metal element, a mask layer made of metal oxide, and channels composed of transition metal dichalcogenides (TMDs). These channels grow from the first electrode layer's surface through designated regions in the mask layer. The device also includes a gate electrode and a gate insulating layer, along with a second electrode layer that interfaces with the channels' opposing ends.
Essential components of the device include the transition metal element in the first electrode layer, which is also part of the TMD channels. The mask layer, situated on the first electrode layer, exposes parts of the electrode surface, allowing channel growth. The gate electrode, positioned on the mask layer, surrounds the channels, while the gate insulating layer resides between the gate electrode and the channels. A second electrode layer completes the structure by contacting the channels' other ends.
The transition metal elements involved may include metals such as Mo, W, Nb, among others, while the TMDs could consist of elements like S, Se, and Te. The mask layer's metal oxide might include Hf, Al, or Zr, and its thickness is specified to be between greater than 0 nm and up to 10 nm. The channels can be formed as nanorods or nanosheets, and they may consist of different TMDs for varied semiconductor properties, including p-type and n-type.
The method for manufacturing the semiconductor device involves several steps: preparing the first electrode layer, forming the mask layer to expose the electrode surface, growing the channels by supplying a chalcogen precursor, and subsequently forming the gate electrode, gate insulating layer, and second electrode layer. The process ensures that the channels' TMDs include the transition metal element from the first electrode layer.
This semiconductor device is designed to leverage the properties of two-dimensional materials like TMDs for improved device scaling. Variations of the device may include different combinations of transition metal elements and chalcogenides to achieve specific electronic properties. The device's structure allows for potential applications in advanced electronics, where miniaturization and efficient material use are critical.